First 2nm-class wafers with backside power delivery complete full-flow processing at GigaFab Chicago, with early silicon exceeding density and power targets.
CHICAGO — Swargate Semiconductor today announced that its SG2 process technology, the company's second-generation gate-all-around platform, has entered risk production at GigaFab Chicago. First full-flow wafers have completed processing with functional yield ahead of the internal plan, keeping SG2 on schedule for high-volume manufacturing in the first half of 2027.
SG2 is Swargate's first node to feature backside power delivery, moving the entire power distribution network to the reverse side of the wafer. Early customer test chips demonstrate an 18% performance gain at iso-power and a 32% power reduction at iso-performance compared with SG3, alongside a 1.6× improvement in logic density.
"Risk production is where a node stops being a roadmap slide and starts being a product," said Rachel Donovan, Chief Technology Officer. "The maturity we are seeing in SG2's early yield data reflects three years of disciplined co-optimization with our lead customers."
More than a dozen customer designs across AI acceleration, flagship mobile, and high-performance networking are already engaged on SG2, with first tape-outs expected in the fourth quarter of 2026.
About Swargate Semiconductor
Swargate Semiconductor Inc. (NASDAQ: SWGT) is a pure-play foundry headquartered in Chicago, Illinois, manufacturing advanced logic from automotive-grade 7nm to 2nm gate-all-around silicon across five fabs on three continents. Founded in 2021, Swargate serves customers in AI, mobile, automotive, and edge computing with 1.4 million wafer starts per year.
Media contact: press@swargate.example · +1 312 555 0140
