Process technology
Logic that defines the leading edge
A production-proven portfolio from automotive-grade 7nm to 2nm gate-all-around — delivered on a cadence our customers plan products around.
2nm-class
SG2
Gate-all-around nanosheet
Risk production · HVM 2027
The angstrom frontier
Our second-generation gate-all-around platform with backside power delivery. SG2 is engineered for the most demanding AI accelerators and flagship mobile SoCs, where every milliwatt is contested.
- 1.6×
- Density vs SG3
- +18%
- Performance at iso-power
- −32%
- Power at iso-performance
- 0.0175 µm²
- SRAM bitcell
3nm-class
SG3
Gate-all-around nanosheet
High-volume manufacturing
GAA, proven at scale
Swargate's first nanosheet node, now shipping in the millions of units across HPC and premium mobile. Third-generation process design kit with industry-leading yield learning curves.
- 1.7×
- Density vs SG5
- +15%
- Performance at iso-power
- −28%
- Power at iso-performance
- 40+
- Design wins
5nm-class
SG5
FinFET, EUV
High-volume manufacturing
The volume workhorse
A mature, extensively characterized FinFET platform for application processors, networking silicon, and edge AI. Available with RF, low-leakage, and high-performance variants.
- <0.07/cm²
- Defect density
- 6
- Process variants
- 210+
- Tape-outs to date
- Best in class
- Yield maturity
7nm-class
SG7
FinFET, automotive-grade
HVM · AEC-Q100 qualified
Built for the road
Automotive and industrial silicon demands zero-defect discipline. SG7 pairs a hardened FinFET process with functional-safety-ready IP and a 15-year supply commitment.
- AEC-Q100 Grade 1
- Qualification
- <0.5
- DPPM
- 15 years
- Supply commitment
- −40 to 150°C
- Operating range
Advanced packaging
When the die ends, the system begins
Front-end scaling is only half the roadmap. Our packaging platforms stack, link, and fan out silicon into systems — co-designed with the nodes they carry.
3D HYBRID BONDING
SwarStack 3D
Die-on-wafer hybrid bonding at sub-9µm pitch, stacking SRAM and logic directly on compute tiles. Up to 8-high stacks with through-silicon vias and shared thermal design kits.
SILICON INTERPOSER
SwarLink 2.5D
Large-format interposers up to 3.3× reticle size linking compute chiplets with HBM4. Co-designed power delivery and signal integrity, validated to 12.8 Tbps/mm beachfront.
FAN-OUT PANEL
SwarFan FO
Panel-level fan-out for mobile and wearables — thinner packages, shorter interconnects, and cost curves that scale with 600mm panel economics.
Design enablement
From PDK to tape-out, without friction
Certified reference flows across all major EDA platforms, a 12,000-block qualified IP catalog, and cloud design environments that cut evaluation from months to days.
HPC & AI
Reticle-limit dies, 3D-stacked cache, and HBM4 integration for training and inference silicon.
Mobile
Flagship SoC platforms tuned for perf-per-watt, with dual-track logic and RF integration.
Automotive
AEC-Q100 qualified nodes, functional-safety IP, and traceability from ingot to ECU.
Edge & IoT
Ultra-low-leakage processes with embedded NVM for always-on intelligence at microwatt budgets.